ON Semiconductor MMSF3P02HDR2G

MMSF3P02HDR2G ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
MMSF3
Detailed Description:
P-Channel 20V 5.6A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds:
1400pF @ 16V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2V @ 250µA
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
46nC @ 10V
Rds On (Max) @ Id, Vgs:
75mOhm @ 3A, 10V
Supplier Device Package:
8-SOIC
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Power Dissipation (Max):
2.5W (Ta)
Current - Continuous Drain (Id) @ 25°C:
5.6A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is MMSF3P02HDR2G. Base Part Number: mmsf3. It features p-channel 20v 5.6a (ta) 2.5w (ta) surface mount 8-soic. The product's input capacitance at maximum includes 1400pf @ 16v. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has a 20v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 46nc @ 10v. It has a maximum Rds On and voltage of 75mohm @ 3a, 10v. 8-soic is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in 8-soic (0.154", 3.90mm width). The product carries maximum power dissipation 2.5w (ta). The continuous current drain at 25°C is 5.6a (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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MMSF3P02HD(Datasheets)
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Mult MSL1 Pkg Chg 20/Dec/2018(PCN Packaging)

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