ON Semiconductor NTTFS5116PLTAG
Product Information
Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
14 nC @ 4.5 V, 25 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
40 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3V
Height:
0.75mm
Width:
3.15mm
Length:
3.15mm
Maximum Drain Source Resistance:
72 mΩ
Package Type:
WDFN
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
20 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+175 °C
Pin Count:
8
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
33 Weeks
Detailed Description:
P-Channel 60V 5.7A (Ta) 3.2W (Ta), 40W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerWDFN
Base Part Number:
NTTFS5
Gate Charge (Qg) (Max) @ Vgs:
25nC @ 10V
Rds On (Max) @ Id, Vgs:
52mOhm @ 6A, 10V
FET Type:
P-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1258pF @ 30V
Mounting Type:
Surface Mount
Supplier Device Package:
8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
5.7A (Ta)
Customer Reference:
Power Dissipation (Max):
3.2W (Ta), 40W (Tc)
Technology:
MOSFET (Metal Oxide)
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Yes. We ship NTTFS5116PLTAG Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NTTFS5116PLTAG. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 14 nc @ 4.5 v, 25 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 40 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 3v of maximum gate threshold voltage. In addition, the height is 0.75mm. Furthermore, the product is 3.15mm wide. Its accurate length is 3.15mm. It provides up to 72 mω maximum drain source resistance. The package is a sort of wdfn. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 20 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 8 pins. The product offers single transistor configuration. It has typical 33 weeks of manufacturer standard lead time. It features p-channel 60v 5.7a (ta) 3.2w (ta), 40w (tc) surface mount 8-wdfn (3.3x3.3). The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in 8-powerwdfn. Base Part Number: nttfs5. The maximum gate charge and given voltages include 25nc @ 10v. It has a maximum Rds On and voltage of 52mohm @ 6a, 10v. It carries FET type p-channel. The on semiconductor's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1258pf @ 30v. 8-wdfn (3.3x3.3) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 5.7a (ta). The product carries maximum power dissipation 3.2w (ta), 40w (tc). This product use mosfet (metal oxide) technology.
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