Rohm Semiconductor RSU002P03T106

RSU002P03T106 Rohm Semiconductor
RSU002P03T106
Rohm Semiconductor

Product Information

Base Part Number:
RSU002
Detailed Description:
P-Channel 30V 250mA (Ta) 200mW (Ta) Surface Mount UMT3
Input Capacitance (Ciss) (Max) @ Vds:
30pF @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Rds On (Max) @ Id, Vgs:
1.4Ohm @ 250mA, 10V
Supplier Device Package:
UMT3
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
SC-70, SOT-323
Power Dissipation (Max):
200mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
250mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is RSU002P03T106. Base Part Number: rsu002. It features p-channel 30v 250ma (ta) 200mw (ta) surface mount umt3. The product's input capacitance at maximum includes 30pf @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. It has a maximum Rds On and voltage of 1.4ohm @ 250ma, 10v. umt3 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in sc-70, sot-323. The product carries maximum power dissipation 200mw (ta). The continuous current drain at 25°C is 250ma (ta). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.

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