Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
7.4 nC @ 5 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
48 W
Maximum Gate Source Voltage:
-15 V, +15 V
Maximum Gate Threshold Voltage:
2V
Height:
2.38mm
Width:
6.22mm
Length:
6.73mm
Maximum Drain Source Resistance:
104 mΩ
Package Type:
IPAK
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
12 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
NTD3055
Detailed Description:
N-Channel 60V 12A (Ta) 1.5W (Ta), 48W (Tj) Through Hole I-PAK
Input Capacitance (Ciss) (Max) @ Vds:
440pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
5V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
2V @ 250µA
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±15V
Gate Charge (Qg) (Max) @ Vgs:
20nC @ 5V
Rds On (Max) @ Id, Vgs:
104mOhm @ 6A, 5V
Supplier Device Package:
I-PAK
Packaging:
Tube
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Max):
1.5W (Ta), 48W (Tj)
Current - Continuous Drain (Id) @ 25°C:
12A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
