ON Semiconductor NTD6415ANLT4G
Product Information
Maximum Drain Source Voltage:
100 V
Typical Gate Charge @ Vgs:
20 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
83 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2V
Height:
2.38mm
Width:
6.22mm
Length:
6.73mm
Maximum Drain Source Resistance:
56 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
23 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
22 Weeks
Detailed Description:
N-Channel 100V 23A (Tc) 83W (Tc) Surface Mount DPAK
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
NTD64
Gate Charge (Qg) (Max) @ Vgs:
35nC @ 10V
Rds On (Max) @ Id, Vgs:
52mOhm @ 10A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1024pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
23A (Tc)
Customer Reference:
Power Dissipation (Max):
83W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock
FAQs
Yes. You can also search NTD6415ANLT4G on website for other similar products.
We accept all major payment methods for all products including ET11839965. Please check your shopping cart at the time of order.
You can order ON Semiconductor brand products with NTD6415ANLT4G directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor NTD6415ANLT4G. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor NTD6415ANLT4G.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11839965 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11839965.
Yes. We ship NTD6415ANLT4G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NTD6415ANLT4G. It has a maximum of 100 v drain source voltage. With a typical gate charge at Vgs includes 20 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 83 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2v of maximum gate threshold voltage. In addition, the height is 2.38mm. Furthermore, the product is 6.22mm wide. Its accurate length is 6.73mm. It provides up to 56 mω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 23 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 22 weeks of manufacturer standard lead time. It features n-channel 100v 23a (tc) 83w (tc) surface mount dpak. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: ntd64. The maximum gate charge and given voltages include 35nc @ 10v. It has a maximum Rds On and voltage of 52mohm @ 10a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1024pf @ 25v. dpak is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 23a (tc). The product carries maximum power dissipation 83w (tc). This product use mosfet (metal oxide) technology.
Reviews
Don’t hesitate to ask questions for better clarification.