Nexperia USA Inc. PSMN1R3-30YL,115

PSMN1R3-30YL-115 Nexperia USA Inc. PSMN1R3-30YL,115
Nexperia USA Inc.

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.15V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-1023, 4-LFPAK
Rds On (Max) @ Id, Vgs:
1.3mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs:
100 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
121W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
6227 pF @ 12 V
standardLeadTime:
16 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
LFPAK56; Power-SO8
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PSMN1R3
ECCN:
EAR99
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This is manufactured by Nexperia USA Inc.. The manufacturer part number is PSMN1R3-30YL,115. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.15v @ 1ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-1023, 4-lfpak. It has a maximum Rds On and voltage of 1.3mohm @ 15a, 10v. The maximum gate charge and given voltages include 100 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 121w (tc). The product's input capacitance at maximum includes 6227 pf @ 12 v. It has a long 16 weeks standard lead time. The product is available in surface mount configuration. lfpak56; power-so8 is the supplier device package value. The continuous current drain at 25°C is 100a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to psmn1r3, a base product number of the product. The product is designated with the ear99 code number.

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Mult Dev Wafer Test Chgs 4/Feb/2022(PCN Assembly/Origin)
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PSMN1R3-30YL(Datasheets)
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Solder Material Update 14/Sep/2015(PCN Design/Specification)
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Mult Devices Label 30/Sep/2018(PCN Packaging)
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All Dev Label Chgs 2/Aug/2020(PCN Packaging)

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