ON Semiconductor NTTFS3A08PZTAG

NTTFS3A08PZTAG ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
NTTFS3
Detailed Description:
P-Channel 20V 9A (Ta) 840mW (Ta) Surface Mount 8-WDFN (3.3x3.3)
Input Capacitance (Ciss) (Max) @ Vds:
5000pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 250µA
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Gate Charge (Qg) (Max) @ Vgs:
56nC @ 4.5V
Rds On (Max) @ Id, Vgs:
6.7mOhm @ 12A, 4.5V
Supplier Device Package:
8-WDFN (3.3x3.3)
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
8-PowerWDFN
Power Dissipation (Max):
840mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
9A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NTTFS3A08PZTAG. Base Part Number: nttfs3. It features p-channel 20v 9a (ta) 840mw (ta) surface mount 8-wdfn (3.3x3.3). The product's input capacitance at maximum includes 5000pf @ 10v. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has a 20v drain to source voltage. The maximum Vgs rate is ±8v. The maximum gate charge and given voltages include 56nc @ 4.5v. It has a maximum Rds On and voltage of 6.7mohm @ 12a, 4.5v. 8-wdfn (3.3x3.3) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in 8-powerwdfn. The product carries maximum power dissipation 840mw (ta). The continuous current drain at 25°C is 9a (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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NTTFS3A08PZ(Datasheets)

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