ON Semiconductor NTLJF3117PT1G
Product Information
Category:
Power MOSFET
Dimensions:
2 x 2 x 0.75mm
Maximum Continuous Drain Current:
4.1 A
Transistor Material:
Si
Width:
2mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1V
Maximum Drain Source Resistance:
100 mΩ
Package Type:
WDFN
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
5.5 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
531 pF @ -10 V
Length:
2mm
Pin Count:
6
Typical Turn-Off Delay Time:
13.7 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.5 W
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.75mm
Typical Turn-On Delay Time:
5.2 ns
Minimum Operating Temperature:
-55 °C
FET Feature:
Schottky Diode (Isolated)
Manufacturer Standard Lead Time:
19 Weeks
Detailed Description:
P-Channel 20V 2.3A (Ta) 710mW (Ta) Surface Mount 6-WDFN (2x2)
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-WDFN Exposed Pad
Base Part Number:
NTLJF31
Gate Charge (Qg) (Max) @ Vgs:
6.2nC @ 4.5V
Rds On (Max) @ Id, Vgs:
100mOhm @ 2A, 4.5V
FET Type:
P-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
531pF @ 10V
Mounting Type:
Surface Mount
Series:
µCool™
Supplier Device Package:
6-WDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
2.3A (Ta)
Customer Reference:
Power Dissipation (Max):
710mW (Ta)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by ON Semiconductor. The manufacturer part number is NTLJF3117PT1G. It is of power mosfet category . The given dimensions of the product include 2 x 2 x 0.75mm. While 4.1 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 2mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 1v of maximum gate threshold voltage. It provides up to 100 mω maximum drain source resistance. The package is a sort of wdfn. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 5.5 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 531 pf @ -10 v . Its accurate length is 2mm. It contains 6 pins. Whereas, its typical turn-off delay time is about 13.7 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.5 w maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 0.75mm. In addition, it has a typical 5.2 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. The FET features of the product include schottky diode (isolated). It has typical 19 weeks of manufacturer standard lead time. It features p-channel 20v 2.3a (ta) 710mw (ta) surface mount 6-wdfn (2x2). The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-wdfn exposed pad. Base Part Number: ntljf31. The maximum gate charge and given voltages include 6.2nc @ 4.5v. It has a maximum Rds On and voltage of 100mohm @ 2a, 4.5v. It carries FET type p-channel. The on semiconductor's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±8v. The product's input capacitance at maximum includes 531pf @ 10v. The product µcool™, is a highly preferred choice for users. 6-wdfn (2x2) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 2.3a (ta). The product carries maximum power dissipation 710mw (ta). This product use mosfet (metal oxide) technology.
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