ON Semiconductor NTR2101PT1G
Product Information
Maximum Drain Source Voltage:
8 V
Typical Gate Charge @ Vgs:
12 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
960 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Maximum Gate Threshold Voltage:
1V
Height:
1.01mm
Width:
1.4mm
Length:
3.04mm
Maximum Drain Source Resistance:
120 mΩ
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
3.7 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
26 Weeks
Base Part Number:
NTR210
Detailed Description:
P-Channel 8V 960mW (Ta) Surface Mount SOT-23-3 (TO-236)
Input Capacitance (Ciss) (Max) @ Vds:
1173pF @ 4V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 250µA
Drain to Source Voltage (Vdss):
8V
Vgs (Max):
±8V
Gate Charge (Qg) (Max) @ Vgs:
15nC @ 4.5V
Rds On (Max) @ Id, Vgs:
52mOhm @ 3.5A, 4.5V
Supplier Device Package:
SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max):
960mW (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NTR2101PT1G. It has a maximum of 8 v drain source voltage. With a typical gate charge at Vgs includes 12 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 960 mw maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 1.01mm. Furthermore, the product is 1.4mm wide. Its accurate length is 3.04mm. It provides up to 120 mω maximum drain source resistance. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 3.7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 26 weeks of manufacturer standard lead time. Base Part Number: ntr210. It features p-channel 8v 960mw (ta) surface mount sot-23-3 (to-236). The product's input capacitance at maximum includes 1173pf @ 4v. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has a 8v drain to source voltage. The maximum Vgs rate is ±8v. The maximum gate charge and given voltages include 15nc @ 4.5v. It has a maximum Rds On and voltage of 52mohm @ 3.5a, 4.5v. sot-23-3 (to-236) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The product carries maximum power dissipation 960mw (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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