Maximum Drain Source Voltage:
20 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
550 mW
Maximum Gate Source Voltage:
-6 V, +6 V
Maximum Gate Threshold Voltage:
1.2V
Height:
0.55mm
Width:
0.85mm
Length:
1.25mm
Maximum Drain Source Resistance:
1.2 Ω
Package Type:
SOT-723
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
990 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
52 Weeks
Base Part Number:
NTK3134
Detailed Description:
N-Channel 20V 750mA (Ta) 310mW (Ta) Surface Mount SOT-723
Input Capacitance (Ciss) (Max) @ Vds:
120pF @ 16V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±6V
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Rds On (Max) @ Id, Vgs:
350mOhm @ 890mA, 4.5V
Supplier Device Package:
SOT-723
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
SOT-723
Power Dissipation (Max):
310mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
750mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
