ON Semiconductor NTD5862NT4G

NTD5862NT4G ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
24 Weeks
Detailed Description:
N-Channel 60V 98A (Tc) 115W (Tc) Surface Mount DPAK
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
NTD5862
Gate Charge (Qg) (Max) @ Vgs:
82nC @ 10V
Rds On (Max) @ Id, Vgs:
5.7mOhm @ 45A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
6000pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
98A (Tc)
Customer Reference:
Power Dissipation (Max):
115W (Tc)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by ON Semiconductor. The manufacturer part number is NTD5862NT4G. It has typical 24 weeks of manufacturer standard lead time. It features n-channel 60v 98a (tc) 115w (tc) surface mount dpak. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: ntd5862. The maximum gate charge and given voltages include 82nc @ 10v. It has a maximum Rds On and voltage of 5.7mohm @ 45a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 6000pf @ 25v. The product is available in surface mount configuration. dpak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 98a (tc). The product carries maximum power dissipation 115w (tc). This product use mosfet (metal oxide) technology.

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Wafer Fab Capacity 27/Jul/2020(PCN Assembly/Origin)
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NTD5862N(Datasheets)

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