This is manufactured by Rohm Semiconductor. The manufacturer part number is RUL035N02TR. It has typical 16 weeks of manufacturer standard lead time. It has a maximum Rds On and voltage of 43mohm @ 3.5a, 4.5v. It features n-channel 20v 3.5a (ta) 320mw (ta) surface mount tumt6. The product's input capacitance at maximum includes 460pf @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1v @ 1ma. The product has a 20v drain to source voltage. The maximum Vgs rate is ±10v. The maximum gate charge and given voltages include 5.7nc @ 4.5v. tumt6 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 6-smd, flat leads. The product carries maximum power dissipation 320mw (ta). The continuous current drain at 25°C is 3.5a (ta). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.
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This is manufactured by Rohm Semiconductor. The manufacturer part number is RUL035N02TR. It has typical 16 weeks of manufacturer standard lead time. It has a maximum Rds On and voltage of 43mohm @ 3.5a, 4.5v. It features n-channel 20v 3.5a (ta) 320mw (ta) surface mount tumt6. The product's input capacitance at maximum includes 460pf @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1v @ 1ma. The product has a 20v drain to source voltage. The maximum Vgs rate is ±10v. The maximum gate charge and given voltages include 5.7nc @ 4.5v. tumt6 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 6-smd, flat leads. The product carries maximum power dissipation 320mw (ta). The continuous current drain at 25°C is 3.5a (ta). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.
Reviews
Don’t hesitate to ask questions for better clarification.