ON Semiconductor NVS4409NT1G

NVS4409NT1G ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
17 Weeks
Detailed Description:
N-Channel 25V 700mA (Ta) 280mW (Tj) Surface Mount SC-70-3 (SOT323)
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SC-70, SOT-323
Base Part Number:
NVS4409
Gate Charge (Qg) (Max) @ Vgs:
1.5nC @ 4.5V
Rds On (Max) @ Id, Vgs:
350mOhm @ 600mA, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.7V, 4.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
25V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
60pF @ 10V
Mounting Type:
Surface Mount
Supplier Device Package:
SC-70-3 (SOT323)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
700mA (Ta)
Customer Reference:
Power Dissipation (Max):
280mW (Tj)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NVS4409NT1G. It has typical 17 weeks of manufacturer standard lead time. It features n-channel 25v 700ma (ta) 280mw (tj) surface mount sc-70-3 (sot323). The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sc-70, sot-323. Base Part Number: nvs4409. The maximum gate charge and given voltages include 1.5nc @ 4.5v. It has a maximum Rds On and voltage of 350mohm @ 600ma, 4.5v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.7v, 4.5v. The on semiconductor's product offers user-desired applications. The product has a 25v drain to source voltage. The maximum Vgs rate is ±8v. The product's input capacitance at maximum includes 60pf @ 10v. The product is available in surface mount configuration. sc-70-3 (sot323) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 700ma (ta). The product carries maximum power dissipation 280mw (tj). This product use mosfet (metal oxide) technology.

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NTS4409N(Datasheets)
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Green Compound Update 04/Mar/2015(PCN Design/Specification)

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