ON Semiconductor NTE4153NT1G
Product Information
Maximum Continuous Drain Current:
915 mA
Width:
0.95mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1.1V
Package Type:
SC-89
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.45V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1.82 nC @ 4.5 V
Channel Type:
N
Length:
1.7mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
300 mW
Maximum Gate Source Voltage:
±6 V
Height:
0.8mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
950 mΩ
Manufacturer Standard Lead Time:
27 Weeks
Detailed Description:
N-Channel 20V 915mA (Ta) 300mW (Tj) Surface Mount SC-89-3
Vgs(th) (Max) @ Id:
1.1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SC-89, SOT-490
Base Part Number:
NTE415
Gate Charge (Qg) (Max) @ Vgs:
1.82nC @ 4.5V
Rds On (Max) @ Id, Vgs:
230mOhm @ 600mA, 4.5V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±6V
Input Capacitance (Ciss) (Max) @ Vds:
110pF @ 16V
Mounting Type:
Surface Mount
Supplier Device Package:
SC-89-3
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
915mA (Ta)
Customer Reference:
Power Dissipation (Max):
300mW (Tj)
Technology:
MOSFET (Metal Oxide)
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Yes. We ship NTE4153NT1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NTE4153NT1G. While 915 ma of maximum continuous drain current. Furthermore, the product is 0.95mm wide. The product complies with automotive standard - aec-q101. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 1.1v of maximum gate threshold voltage. The package is a sort of sc-89. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.45v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 1.82 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 1.7mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 300 mw maximum power dissipation. It features a maximum gate source voltage of ±6 v. In addition, the height is 0.8mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.1v . It provides up to 950 mω maximum drain source resistance. It has typical 27 weeks of manufacturer standard lead time. It features n-channel 20v 915ma (ta) 300mw (tj) surface mount sc-89-3. The typical Vgs (th) (max) of the product is 1.1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sc-89, sot-490. Base Part Number: nte415. The maximum gate charge and given voltages include 1.82nc @ 4.5v. It has a maximum Rds On and voltage of 230mohm @ 600ma, 4.5v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±6v. The product's input capacitance at maximum includes 110pf @ 16v. sc-89-3 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 915ma (ta). The product carries maximum power dissipation 300mw (tj). This product use mosfet (metal oxide) technology.
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