Maximum Drain Source Voltage:
20 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
200 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Maximum Gate Threshold Voltage:
1V
Height:
0.4mm
Width:
0.85mm
Length:
1.05mm
Maximum Drain Source Resistance:
4.5 Ω, 10 Ω
Package Type:
SOT-963
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
250 mA, 280 mA
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-963
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
-
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
NTUD3169CZT5G Models
Current - Continuous Drain (Id) @ 25°C:
220mA, 200mA
edacadModelUrl:
/en/models/1973734
Configuration:
N and P-Channel
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
12.5pF @ 15V
standardLeadTime:
8 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-963
Power - Max:
125mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTUD3169
ECCN:
EAR99
This is manufactured by onsemi. The manufacturer part number is NTUD3169CZT5G. It has a maximum of 20 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 200 mw maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 0.4mm. Furthermore, the product is 0.85mm wide. Its accurate length is 1.05mm. It provides up to 4.5 ω, 10 ω maximum drain source resistance. The package is a sort of sot-963. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 250 ma, 280 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-963. It has a maximum Rds On and voltage of 1.5ohm @ 100ma, 4.5v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 220ma, 200ma. The product is available in n and p-channel configuration. It is shipped in tape & reel (tr) package . The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 12.5pf @ 15v. It has a long 8 weeks standard lead time. sot-963 is the supplier device package value. The maximum power of the product is 125mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntud3169, a base product number of the product. The product is designated with the ear99 code number.
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