onsemi FDMD8560L

FDMD8560L onsemi
onsemi

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
3.2mOhm @ 22A, 10V
title:
FDMD8560L
Vgs(th) (Max) @ Id:
3V @ 250µA
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
22A, 93A
Configuration:
2 N-Channel (Half Bridge)
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
60V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
11130pF @ 30V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Gate Charge (Qg) (Max) @ Vgs:
128nC @ 10V
Supplier Device Package:
8-Power 5x6
Packaging:
Tape & Reel (TR)
Power - Max:
2.2W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMD8560
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is FDMD8560L. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powerwdfn. It has a maximum Rds On and voltage of 3.2mohm @ 22a, 10v. The typical Vgs (th) (max) of the product is 3v @ 250µa. In addition, it is reach unaffected. The continuous current drain at 25°C is 22a, 93a. The product is available in 2 n-channel (half bridge) configuration. The onsemi's product offers user-desired applications. The product has a 60v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 11130pf @ 30v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. The maximum gate charge and given voltages include 128nc @ 10v. 8-power 5x6 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 2.2w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdmd8560, a base product number of the product. The product is designated with the ear99 code number.

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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Dev EOL 08/Jul/2021(PCN Obsolescence/ EOL)
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FDMD8560L(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

Reviews

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi FDMD8560L and the best services all around the world ET21516688. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi FDMD8560L, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.

Our onsemi FDMD8560L is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FDMD8560L. We stock a large inventory containing a wide range of variety ET21516688, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi FDMD8560L. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21516688 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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