Rohm Semiconductor SH8K26GZ0TB

SH8K26GZ0TB Rohm Semiconductor
Rohm Semiconductor

Product Information

FET Feature:
Standard
Base Part Number:
SH8K26
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 40V 6A (Ta) 2W (Ta) Surface Mount 8-SOP
Input Capacitance (Ciss) (Max) @ Vds:
280pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
2.9nC @ 5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Drain to Source Voltage (Vdss):
40V
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
38mOhm @ 6A, 10V
Supplier Device Package:
8-SOP
Manufacturer Standard Lead Time:
16 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
2W (Ta)
Current - Continuous Drain (Id) @ 25°C:
6A (Ta)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is SH8K26GZ0TB. The FET features of the product include standard. Base Part Number: sh8k26. It features mosfet array 2 n-channel (dual) 40v 6a (ta) 2w (ta) surface mount 8-sop. The product's input capacitance at maximum includes 280pf @ 10v. The maximum gate charge and given voltages include 2.9nc @ 5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has a 40v drain to source voltage. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 38mohm @ 6a, 10v. 8-sop is the supplier device package value. It has typical 16 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 2w (ta). The continuous current drain at 25°C is 6a (ta). The rohm semiconductor's product offers user-desired applications.

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SH8K26 Datasheet(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Rohm Semiconductor SH8K26GZ0TB and the best services all around the world ET18353051. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Rohm Semiconductor SH8K26GZ0TB, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Rohm Semiconductor, commonly silicon.

Our Rohm Semiconductor SH8K26GZ0TB is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at SH8K26GZ0TB. We stock a large inventory containing a wide range of variety ET18353051, differentiates by its unique features Rohm Semiconductor. We also have discounts for potential customers and let it until most of them avail from Rohm Semiconductor SH8K26GZ0TB. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET18353051 from leading Rohm Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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