Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
9.8 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
57.5 W
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
2V
Height:
1.05mm
Width:
6.1mm
Length:
5.1mm
Maximum Drain Source Resistance:
6.5 mΩ
Package Type:
DFN
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
68 A
Minimum Gate Threshold Voltage:
1.2V
Forward Diode Voltage:
1.2V
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
8
FET Feature:
Standard
Base Part Number:
NVMFD5
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 60V 15.5A (Ta), 68A (Tc) 3W (Ta), 57.5W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Input Capacitance (Ciss) (Max) @ Vds:
1440pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
21.3nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2V @ 50µA
Drain to Source Voltage (Vdss):
60V
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
6.5mOhm @ 20A, 10V
Supplier Device Package:
8-DFN (5x6) Dual Flag (SO8FL-Dual)
Manufacturer Standard Lead Time:
17 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
3W (Ta), 57.5W (Tc)
Current - Continuous Drain (Id) @ 25°C:
15.5A (Ta), 68A (Tc)
Manufacturer:
ON Semiconductor
