ON Semiconductor SI4532DY
Product Information
Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
15 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.5mm
Width:
4mm
Length:
5mm
Minimum Gate Threshold Voltage:
1V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
3.5 A, 3.9 A
Transistor Material:
Si
Maximum Drain Source Resistance:
95 mΩ, 190 mΩ
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Isolated
FET Feature:
Standard
Base Part Number:
SI453
Detailed Description:
Mosfet Array N and P-Channel 30V 3.9A, 3.5A 900mW Surface Mount 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds:
235pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
15nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Drain to Source Voltage (Vdss):
30V
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
65mOhm @ 3.9A, 10V
Supplier Device Package:
8-SOIC
Manufacturer Standard Lead Time:
8 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
900mW
Current - Continuous Drain (Id) @ 25°C:
3.9A, 3.5A
Manufacturer:
ON Semiconductor
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FAQs
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Yes. Our products in Transistors - FETs, MOSFETs - Arrays category are shipped in lowest possible time.
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET14544368 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14544368.
Yes. We ship SI4532DY Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is SI4532DY. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 15 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.5mm. Furthermore, the product is 4mm wide. Its accurate length is 5mm. Whereas its minimum gate threshold voltage includes 1v. The package is a sort of soic. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 3.5 a, 3.9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 95 mω, 190 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers isolated transistor configuration. The FET features of the product include standard. Base Part Number: si453. It features mosfet array n and p-channel 30v 3.9a, 3.5a 900mw surface mount 8-soic. The product's input capacitance at maximum includes 235pf @ 10v. The maximum gate charge and given voltages include 15nc @ 10v. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has a 30v drain to source voltage. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 65mohm @ 3.9a, 10v. 8-soic is the supplier device package value. It has typical 8 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n and p-channel. The maximum power of the product is 900mw. The continuous current drain at 25°C is 3.9a, 3.5a. The on semiconductor's product offers user-desired applications.
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