Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
8 nC @ 5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.5mm
Width:
4mm
Length:
5mm
Maximum Drain Source Resistance:
100 mΩ
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
3.5 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
8
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
Base Part Number:
FDS99
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 60V 3.5A 1W Surface Mount 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds:
420pF @ 30V
Gate Charge (Qg) (Max) @ Vgs:
13nC @ 5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Series:
PowerTrench®
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
100mOhm @ 3.5A, 10V
Supplier Device Package:
8-SOIC
Manufacturer Standard Lead Time:
44 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
1W
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
3.5A
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is FDS9945. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 8 nc @ 5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.5mm. Furthermore, the product is 4mm wide. Its accurate length is 5mm. It provides up to 100 mω maximum drain source resistance. The package is a sort of soic. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 3.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 8 pins. The product offers isolated transistor configuration. The FET features of the product include logic level gate. Base Part Number: fds99. It features mosfet array 2 n-channel (dual) 60v 3.5a 1w surface mount 8-soic. The product's input capacitance at maximum includes 420pf @ 30v. The maximum gate charge and given voltages include 13nc @ 5v. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product powertrench®, is a highly preferred choice for users. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 100mohm @ 3.5a, 10v. 8-soic is the supplier device package value. It has typical 44 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 1w. The product has a 60v drain to source voltage. The continuous current drain at 25°C is 3.5a. The on semiconductor's product offers user-desired applications.
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