Category:
Power MOSFET
Dimensions:
4.9 x 3.9 x 1.575mm
Maximum Continuous Drain Current:
5 A, 7 A
Transistor Material:
Si
Width:
3.9mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
3V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
9.6 nC @ 10 V, 11.4 nC @ 10 V
Channel Type:
N, P
Typical Input Capacitance @ Vds:
528 pF@ -15 V, 575 pF@ 15 V
Length:
4.9mm
Pin Count:
8
Typical Turn-Off Delay Time:
14 ns, 23 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.575mm
Typical Turn-On Delay Time:
7 ns, 8 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
42 mΩ, 78 mΩ
FET Feature:
Logic Level Gate
Base Part Number:
FDS8958
Detailed Description:
Mosfet Array N and P-Channel 30V 7A, 5A 900mW Surface Mount 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds:
575pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
16nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Series:
Automotive, AEC-Q101, PowerTrench®
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
28mOhm @ 7A, 10V
Supplier Device Package:
8-SOIC
Manufacturer Standard Lead Time:
46 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
900mW
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
7A, 5A
Manufacturer:
ON Semiconductor
