Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
2.4 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.5 W
Maximum Gate Source Voltage:
±12 V
Maximum Gate Threshold Voltage:
1.5V
Height:
0.75mm
Width:
2mm
Length:
2mm
Maximum Drain Source Resistance:
268 mΩ
Package Type:
WDFN
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
2.9 A
Minimum Gate Threshold Voltage:
0.4V
Forward Diode Voltage:
1.2V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
FET Feature:
Logic Level Gate
Base Part Number:
FDMA2002
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 30V 2.9A 650mW Surface Mount 6-MicroFET (2x2)
Input Capacitance (Ciss) (Max) @ Vds:
220pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
3nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Series:
PowerTrench®
Package / Case:
6-VDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
123mOhm @ 2.9A, 4.5V
Supplier Device Package:
6-MicroFET (2x2)
Manufacturer Standard Lead Time:
23 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
650mW
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
2.9A
Manufacturer:
ON Semiconductor
