ON Semiconductor FDC6303N
Product Information
Maximum Drain Source Voltage:
25 V
Typical Gate Charge @ Vgs:
1.64 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
900 mW
Maximum Gate Source Voltage:
+8 V
Height:
1mm
Width:
1.7mm
Length:
3mm
Minimum Gate Threshold Voltage:
0.65V
Package Type:
SOT-23
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
680 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
450 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
Base Part Number:
FDC6303
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 25V 680mA 700mW Surface Mount SuperSOT™-6
Input Capacitance (Ciss) (Max) @ Vds:
50pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
2.3nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Drain to Source Voltage (Vdss):
25V
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
450mOhm @ 500mA, 4.5V
Supplier Device Package:
SuperSOT™-6
Manufacturer Standard Lead Time:
14 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
700mW
Current - Continuous Drain (Id) @ 25°C:
680mA
Manufacturer:
ON Semiconductor
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Yes. We ship FDC6303N Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FDC6303N. It has a maximum of 25 v drain source voltage. With a typical gate charge at Vgs includes 1.64 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 900 mw maximum power dissipation. It features a maximum gate source voltage of +8 v. In addition, the height is 1mm. Furthermore, the product is 1.7mm wide. Its accurate length is 3mm. Whereas its minimum gate threshold voltage includes 0.65v. The package is a sort of sot-23. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 680 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 450 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration. The FET features of the product include logic level gate. Base Part Number: fdc6303. It features mosfet array 2 n-channel (dual) 25v 680ma 700mw surface mount supersot™-6. The product's input capacitance at maximum includes 50pf @ 10v. The maximum gate charge and given voltages include 2.3nc @ 4.5v. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has a 25v drain to source voltage. Moreover, the product comes in sot-23-6 thin, tsot-23-6. It has a maximum Rds On and voltage of 450mohm @ 500ma, 4.5v. supersot™-6 is the supplier device package value. It has typical 14 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 700mw. The continuous current drain at 25°C is 680ma. The on semiconductor's product offers user-desired applications.
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