Fairchild FDS6900AS Dual N-channel MOSFET, 6.9 A, 8.2 A, 30 V PowerTrench, SyncFET, 8-Pin SOIC
Product Information
Category:
Power MOSFET
Dimensions:
5 x 3.99 x 1.5mm
Maximum Continuous Drain Current:
6.9 A, 8.2 A
Transistor Material:
Si
Width:
3.99mm
Transistor Configuration:
Series
Maximum Drain Source Voltage:
30 V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
10 nC @ 10 V, 11 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
570 pF@ 15 V, 600 pF@ 15 V
Length:
5mm
Pin Count:
8
Typical Turn-Off Delay Time:
23 ns, 26 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Series:
PowerTrench, SyncFET
Maximum Gate Source Voltage:
±20 V
Height:
1.5mm
Typical Turn-On Delay Time:
10 (Q1) ns, 11 (Q2) ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
22 mΩ, 27 mΩ
FET Feature:
Logic Level Gate
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs:
15nC @ 10V
Rds On (Max) @ Id, Vgs:
27mOhm @ 6.9A, 10V
Current - Continuous Drain (Id) @ 25°C:
6.9A, 8.2A
Configuration:
2 N-Channel (Dual)
Package:
Bulk
Drain to Source Voltage (Vdss):
30V
Input Capacitance (Ciss) (Max) @ Vds:
600pF @ 15V
Mounting Type:
Surface Mount
Series:
PowerTrench®, SyncFET™
Supplier Device Package:
8-SOIC
Power - Max:
900mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDS69
ECCN:
EAR99
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This is Fairchild Dual N-channel MOSFET 6.9 A 8.2 A 30 V PowerTrench SyncFET 8-Pin SOIC manufactured by Fairchild Semiconductor. The manufacturer part number is FDS6900AS. It is of power mosfet category . The given dimensions of the product include 5 x 3.99 x 1.5mm. While 6.9 a, 8.2 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.99mm wide. The product offers series transistor configuration. It has a maximum of 30 v drain source voltage. The package is a sort of soic. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 10 nc @ 10 v, 11 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 570 pf@ 15 v, 600 pf@ 15 v . Its accurate length is 5mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 23 ns, 26 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2 w maximum power dissipation. The product powertrench, syncfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.5mm. In addition, it has a typical 10 (q1) ns, 11 (q2) ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 22 mω, 27 mω maximum drain source resistance. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). The maximum gate charge and given voltages include 15nc @ 10v. It has a maximum Rds On and voltage of 27mohm @ 6.9a, 10v. The continuous current drain at 25°C is 6.9a, 8.2a. The product is available in 2 n-channel (dual) configuration. It is shipped in bulk package . The product has a 30v drain to source voltage. The product's input capacitance at maximum includes 600pf @ 15v. The product powertrench®, syncfet™, is a highly preferred choice for users. 8-soic is the supplier device package value. The maximum power of the product is 900mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to fds69, a base product number of the product. The product is designated with the ear99 code number.
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