ON Semiconductor NVMFD5873NLT1G

NVMFD5873NLT1G ON Semiconductor
ON Semiconductor

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
NVMFD5873
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 60V 10A 3.1W Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Input Capacitance (Ciss) (Max) @ Vds:
1560pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
30.5nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Drain to Source Voltage (Vdss):
60V
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
13mOhm @ 15A, 10V
Supplier Device Package:
8-DFN (5x6) Dual Flag (SO8FL-Dual)
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
3.1W
Current - Continuous Drain (Id) @ 25°C:
10A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NVMFD5873NLT1G. The FET features of the product include logic level gate. Base Part Number: nvmfd5873. It features mosfet array 2 n-channel (dual) 60v 10a 3.1w surface mount 8-dfn (5x6) dual flag (so8fl-dual). The product's input capacitance at maximum includes 1560pf @ 25v. The maximum gate charge and given voltages include 30.5nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has a 60v drain to source voltage. Moreover, the product comes in 8-powertdfn. It has a maximum Rds On and voltage of 13mohm @ 15a, 10v. 8-dfn (5x6) dual flag (so8fl-dual) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 3.1w. The continuous current drain at 25°C is 10a. The on semiconductor's product offers user-desired applications.

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NVMFD5873NL(WF)(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative ON Semiconductor NVMFD5873NLT1G and the best services all around the world ET12863582. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, ON Semiconductor NVMFD5873NLT1G, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as ON Semiconductor, commonly silicon.

Our ON Semiconductor NVMFD5873NLT1G is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at NVMFD5873NLT1G. We stock a large inventory containing a wide range of variety ET12863582, differentiates by its unique features ON Semiconductor. We also have discounts for potential customers and let it until most of them avail from ON Semiconductor NVMFD5873NLT1G. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET12863582 from leading ON Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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