Rohm Semiconductor BSM300D12P2E001

BSM300D12P2E001 Rohm Semiconductor
Rohm Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-40°C ~ 150°C (TJ)
Package / Case:
Module
Rds On (Max) @ Id, Vgs:
-
title:
BSM300D12P2E001
Vgs(th) (Max) @ Id:
4V @ 68mA
REACH Status:
REACH Unaffected
edacadModel:
BSM300D12P2E001 Models
Current - Continuous Drain (Id) @ 25°C:
300A (Tc)
edacadModelUrl:
/en/models/5438084
Configuration:
2 N-Channel (Half Bridge)
Manufacturer:
Rohm Semiconductor
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
22 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
35000pF @ 10V
Mounting Type:
Chassis Mount
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Supplier Device Package:
Module
Packaging:
Tray
Power - Max:
1875W
Technology:
Silicon Carbide (SiC)
Base Product Number:
BSM300
ECCN:
EAR99
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This is manufactured by Rohm Semiconductor. The manufacturer part number is BSM300D12P2E001. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -40°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in module. The typical Vgs (th) (max) of the product is 4v @ 68ma. In addition, it is reach unaffected. The continuous current drain at 25°C is 300a (tc). The product is available in 2 n-channel (half bridge) configuration. The rohm semiconductor's product offers user-desired applications. The product has a 1200v (1.2kv) drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). It has a long 22 weeks standard lead time. The product's input capacitance at maximum includes 35000pf @ 10v. The product is available in chassis mount configuration. module is the supplier device package value. In addition, tray is the available packaging type of the product. The maximum power of the product is 1875w. This product use silicon carbide (sic) technology. Moreover, it corresponds to bsm300, a base product number of the product. The product is designated with the ear99 code number.

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SiC PM Reliability Test(Reliability Documents)
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BSM300D/BSM400D 20/Jan/2020(PCN Assembly/Origin)
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BSM300D12P2E001 Constitution Material List(Environmental Information)
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BSM300D12P2E001 ESD Data(Environmental Information)
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E Type taping Spec(Datasheets)
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SiCPMEtype Inner Structure(Other Related Documents)

Reviews

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Rohm Semiconductor BSM300D12P2E001 and the best services all around the world ET12105098. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Rohm Semiconductor BSM300D12P2E001, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Rohm Semiconductor, commonly silicon.

Our Rohm Semiconductor BSM300D12P2E001 is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at BSM300D12P2E001. We stock a large inventory containing a wide range of variety ET12105098, differentiates by its unique features Rohm Semiconductor. We also have discounts for potential customers and let it until most of them avail from Rohm Semiconductor BSM300D12P2E001. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET12105098 from leading Rohm Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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