ON Semiconductor NTJD1155LT1G
Product Information
The NTJD1155LT1G is a refined dual N-channel Power MOSFET in a compact SOT-363 package, built for exceptional efficiency and low on-resistance in power management applications. Boasting an ultra-small footprint, it features advanced trench technology and dual N-channel architecture,perfect for space-constrained power-switching applications.
Maximum Drain Source Voltage:
8 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
400 mW
Maximum Gate Source Voltage:
+8 V
Maximum Gate Threshold Voltage:
1V
Height:
1mm
Width:
1.35mm
Length:
2.2mm
Maximum Drain Source Resistance:
320 mΩ
Package Type:
SOT-363 (SC-88)
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1.3 A
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
N+P Loadswitch
FET Feature:
Standard
Base Part Number:
NTJD11
Detailed Description:
Mosfet Array N and P-Channel 8V 1.3A 400mW Surface Mount SC-88/SC70-6/SOT-363
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 250µA
Drain to Source Voltage (Vdss):
8V
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
175mOhm @ 1.2A, 4.5V
Supplier Device Package:
SC-88/SC70-6/SOT-363
Manufacturer Standard Lead Time:
43 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
400mW
Current - Continuous Drain (Id) @ 25°C:
1.3A
Manufacturer:
ON Semiconductor
Checking for live stock
FAQs
Yes. You can also search NTJD1155LT1G on website for other similar products.
We accept all major payment methods for all products including ET11889280. Please check your shopping cart at the time of order.
You can order ON Semiconductor brand products with NTJD1155LT1G directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - FETs, MOSFETs - Arrays category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor NTJD1155LT1G. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor NTJD1155LT1G.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11889280 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11889280.
Yes. We ship NTJD1155LT1G Internationally to many countries around the world.
The ON Semiconductor NTJD1155LT1G is a powerful N-channel trench MOSFET with a low threshold voltage, making it suitable for applications requiring low-voltage. It is designed to deliver high power efficiency and switching speed while maintaining low levels of on-resistance, excellent for a wide range of power management and conversion applications. It is a high-performance MOSFET offering low on-resistance, low threshold voltage, high power efficiency, and switching speed, making it an excellent choice for power management and conversion applications.
The product is tailored to be robust and reliable, with several features that ensure its longevity and durability. It has a maximum operating temperature of 175°C, which means it can handle high temperatures without experiencing performance degradation or failure. It also has a low thermal resistance, which helps dissipate heat quickly, further increasing its reliability.
The NTJD1155LT1G is designed to deliver high power efficiency and switching speed. It has a maximum drain-source voltage of 30V and a maximum continuous drain current of 57A, so it can easily handle high power levels. Additionally, it has a fast-switching speed, with a typical turn-on and turn-off time of just 3.3ns and 4.2ns, respectively.
It is designed to have a low on-resistance, which means it can handle high currents with minimal power loss. It has an on-resistance of just 5.5 mOhms, which makes it an efficient choice for power conversion applications where minimizing power losses is important. The NTJD1155LT1G has a low threshold voltage, easily turning it on and off. Its threshold voltage is just 1V, so it can be easily controlled by a low-voltage signal, making it an excellent choice for battery-powered applications.
Typical Uses of ON Semiconductor NTJD1155LT1G:
The NTJD1155LT1G is a versatile MOSFET used in various applications. Some of its common applications include:
Reviews
Don’t hesitate to ask questions for better clarification.