Rohm Semiconductor QS8J1TR

QS8J1TR Rohm Semiconductor
QS8J1TR
Rohm Semiconductor

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
*J1
Detailed Description:
Mosfet Array 2 P-Channel (Dual) 12V 4.5A 1.5W Surface Mount TSMT8
Input Capacitance (Ciss) (Max) @ Vds:
2450pF @ 6V
Gate Charge (Qg) (Max) @ Vgs:
31nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 1mA
Drain to Source Voltage (Vdss):
12V
Package / Case:
8-SMD, Flat Lead
Rds On (Max) @ Id, Vgs:
29mOhm @ 4.5A, 4.5V
Supplier Device Package:
TSMT8
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
2 P-Channel (Dual)
Customer Reference:
Power - Max:
1.5W
Current - Continuous Drain (Id) @ 25°C:
4.5A
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is QS8J1TR. The FET features of the product include logic level gate. Base Part Number: *j1. It features mosfet array 2 p-channel (dual) 12v 4.5a 1.5w surface mount tsmt8. The product's input capacitance at maximum includes 2450pf @ 6v. The maximum gate charge and given voltages include 31nc @ 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1v @ 1ma. The product has a 12v drain to source voltage. Moreover, the product comes in 8-smd, flat lead. It has a maximum Rds On and voltage of 29mohm @ 4.5a, 4.5v. tsmt8 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type 2 p-channel (dual). The maximum power of the product is 1.5w. The continuous current drain at 25°C is 4.5a. The rohm semiconductor's product offers user-desired applications.

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QS8J1(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Rohm Semiconductor QS8J1TR and the best services all around the world ET11707687. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Rohm Semiconductor QS8J1TR, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Rohm Semiconductor, commonly silicon.

Our Rohm Semiconductor QS8J1TR is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at QS8J1TR. We stock a large inventory containing a wide range of variety ET11707687, differentiates by its unique features Rohm Semiconductor. We also have discounts for potential customers and let it until most of them avail from Rohm Semiconductor QS8J1TR. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET11707687 from leading Rohm Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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