Rohm Semiconductor SH8J31GZETB

SH8J31GZETB Rohm Semiconductor
SH8J31GZETB
Rohm Semiconductor

Product Information

Manufacturer Standard Lead Time:
16 Weeks
Base Part Number:
SH8J31
Detailed Description:
Mosfet Array 2 P-Channel (Dual) 60V 4.5A 2W Surface Mount 8-SOP
Input Capacitance (Ciss) (Max) @ Vds:
2500pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
40nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 1mA
Drain to Source Voltage (Vdss):
60V
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
70mOhm @ 4.5A, 10V
Supplier Device Package:
8-SOP
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 P-Channel (Dual)
Customer Reference:
Power - Max:
2W
Current - Continuous Drain (Id) @ 25°C:
4.5A
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is SH8J31GZETB. It has typical 16 weeks of manufacturer standard lead time. Base Part Number: sh8j31. It features mosfet array 2 p-channel (dual) 60v 4.5a 2w surface mount 8-sop. The product's input capacitance at maximum includes 2500pf @ 10v. The maximum gate charge and given voltages include 40nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 3v @ 1ma. The product has a 60v drain to source voltage. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 70mohm @ 4.5a, 10v. 8-sop is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 p-channel (dual). The maximum power of the product is 2w. The continuous current drain at 25°C is 4.5a. The rohm semiconductor's product offers user-desired applications.

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SH8J31(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Rohm Semiconductor SH8J31GZETB and the best services all around the world ET11595259. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Rohm Semiconductor SH8J31GZETB, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Rohm Semiconductor, commonly silicon.

Our Rohm Semiconductor SH8J31GZETB is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at SH8J31GZETB. We stock a large inventory containing a wide range of variety ET11595259, differentiates by its unique features Rohm Semiconductor. We also have discounts for potential customers and let it until most of them avail from Rohm Semiconductor SH8J31GZETB. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET11595259 from leading Rohm Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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