Rohm Semiconductor US6M11TR

US6M11TR Rohm Semiconductor
Rohm Semiconductor

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
*M11
Detailed Description:
Mosfet Array N and P-Channel 20V, 12V 1.5A, 1.3A 1W Surface Mount TUMT6
Input Capacitance (Ciss) (Max) @ Vds:
110pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
1.8nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 1mA
Drain to Source Voltage (Vdss):
20V, 12V
Package / Case:
6-SMD, Flat Leads
Rds On (Max) @ Id, Vgs:
180mOhm @ 1.5A, 4.5V
Supplier Device Package:
TUMT6
Manufacturer Standard Lead Time:
16 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
1W
Current - Continuous Drain (Id) @ 25°C:
1.5A, 1.3A
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is US6M11TR. The FET features of the product include logic level gate. Base Part Number: *m11. It features mosfet array n and p-channel 20v, 12v 1.5a, 1.3a 1w surface mount tumt6. The product's input capacitance at maximum includes 110pf @ 10v. The maximum gate charge and given voltages include 1.8nc @ 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1v @ 1ma. The product has a 20v, 12v drain to source voltage. Moreover, the product comes in 6-smd, flat leads. It has a maximum Rds On and voltage of 180mohm @ 1.5a, 4.5v. tumt6 is the supplier device package value. It has typical 16 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n and p-channel. The maximum power of the product is 1w. The continuous current drain at 25°C is 1.5a, 1.3a. The rohm semiconductor's product offers user-desired applications.

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Transistor, MOSFET Level 1 MSL(Environmental Information)
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TUMT6 Constitution Material List(Environmental Information)
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Transistor Whisker Info(Environmental Information)
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US6M11 ESD Data(Environmental Information)
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TUMT6 TR Taping Spec(Datasheets)
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US6M11(Datasheets)
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TUMT6D Inner Structure(Other Related Documents)
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Transistor, MOSFET Flammability(Other Related Documents)
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TUMT6 Part Marking(Other Related Documents)
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TUMT6 MOS Reliability Test(Other Related Documents)

Reviews

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Rohm Semiconductor US6M11TR and the best services all around the world ET11568517. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Rohm Semiconductor US6M11TR, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Rohm Semiconductor, commonly silicon.

Our Rohm Semiconductor US6M11TR is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at US6M11TR. We stock a large inventory containing a wide range of variety ET11568517, differentiates by its unique features Rohm Semiconductor. We also have discounts for potential customers and let it until most of them avail from Rohm Semiconductor US6M11TR. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET11568517 from leading Rohm Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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