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This is manufactured by Diodes Incorporated. The manufacturer part number is DMG6601LVT-7. The FET features of the product include logic level gate. Base Part Number: dmg6601. It features mosfet array n and p-channel 30v 3.8a, 2.5a 850mw surface mount tsot-26. The product's input capacitance at maximum includes 422pf @ 15v. The maximum gate charge and given voltages include 12.3nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has a 30v drain to source voltage. Moreover, the product comes in sot-23-6 thin, tsot-23-6. It has a maximum Rds On and voltage of 55mohm @ 3.4a, 10v. tsot-26 is the supplier device package value. It has typical 33 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n and p-channel. The maximum power of the product is 850mw. The continuous current drain at 25°C is 3.8a, 2.5a. The diodes incorporated's product offers user-desired applications.
For more information please check the datasheets.
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