Rohm Semiconductor BSM080D12P2C008

BSM080D12P2C008 Rohm Semiconductor
Rohm Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
175°C (TJ)
Package / Case:
Module
Rds On (Max) @ Id, Vgs:
-
title:
BSM080D12P2C008
Vgs(th) (Max) @ Id:
4V @ 13.2mA
REACH Status:
REACH Unaffected
edacadModel:
BSM080D12P2C008 Models
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
edacadModelUrl:
/en/models/6207425
Configuration:
2 N-Channel (Dual)
Manufacturer:
Rohm Semiconductor
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
22 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
800pF @ 10V
Mounting Type:
Chassis Mount
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Supplier Device Package:
Module
Packaging:
Tray
Power - Max:
600W
Technology:
Silicon Carbide (SiC)
Base Product Number:
BSM080
ECCN:
EAR99
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This is manufactured by Rohm Semiconductor. The manufacturer part number is BSM080D12P2C008. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 175°c (tj) operating temperature range. Moreover, the product comes in module. The typical Vgs (th) (max) of the product is 4v @ 13.2ma. In addition, it is reach unaffected. The continuous current drain at 25°C is 80a (tc). The product is available in 2 n-channel (dual) configuration. The rohm semiconductor's product offers user-desired applications. The product has a 1200v (1.2kv) drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). It has a long 22 weeks standard lead time. The product's input capacitance at maximum includes 800pf @ 10v. The product is available in chassis mount configuration. module is the supplier device package value. In addition, tray is the available packaging type of the product. The maximum power of the product is 600w. This product use silicon carbide (sic) technology. Moreover, it corresponds to bsm080, a base product number of the product. The product is designated with the ear99 code number.

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SiC PM Reliability Test(Reliability Documents)
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BSM080D12P2C008 ESD Data(Environmental Information)
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BSM080D12P2C008 Constitution Material List(Environmental Information)
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BSM080D12P2C008(Datasheets)
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SiCPMCtype Inner Structure(Other Related Documents)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Rohm Semiconductor BSM080D12P2C008 and the best services all around the world ET11156503. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Rohm Semiconductor BSM080D12P2C008, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Rohm Semiconductor, commonly silicon.

Our Rohm Semiconductor BSM080D12P2C008 is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at BSM080D12P2C008. We stock a large inventory containing a wide range of variety ET11156503, differentiates by its unique features Rohm Semiconductor. We also have discounts for potential customers and let it until most of them avail from Rohm Semiconductor BSM080D12P2C008. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET11156503 from leading Rohm Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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