Nexperia USA Inc. PMDXB1200UPEZ

PMDXB1200UPEZ Nexperia USA Inc.
Nexperia USA Inc.

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-XFDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
1.4Ohm @ 410mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
1.2nC @ 4.5V
Vgs(th) (Max) @ Id:
950mV @ 250µA
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
410mA
Configuration:
2 P-Channel (Dual)
Manufacturer:
Nexperia USA Inc.
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
8 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
43.2pF @ 15V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DFN1010B-6
Packaging:
Tape & Reel (TR)
Power - Max:
285mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PMDXB1200
ECCN:
EAR99
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This is manufactured by Nexperia USA Inc.. The manufacturer part number is PMDXB1200UPEZ. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-xfdfn exposed pad. It has a maximum Rds On and voltage of 1.4ohm @ 410ma, 4.5v. The maximum gate charge and given voltages include 1.2nc @ 4.5v. The typical Vgs (th) (max) of the product is 950mv @ 250µa. In addition, it is reach unaffected. The continuous current drain at 25°C is 410ma. The product is available in 2 p-channel (dual) configuration. The nexperia usa inc.'s product offers user-desired applications. The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). It has a long 8 weeks standard lead time. The product's input capacitance at maximum includes 43.2pf @ 15v. The product is available in surface mount configuration. dfn1010b-6 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 285mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to pmdxb1200, a base product number of the product. The product is designated with the ear99 code number.

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PMDXB1200UPE(Datasheets)
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Mult DEV Label Change 12/Jun/2024(PCN Design/Specification)
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Label Chg 12/Mar/2017(PCN Packaging)
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Mult DEV Tape Change 04/Mar/2024(PCN Packaging)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Nexperia USA Inc. PMDXB1200UPEZ and the best services all around the world ET11063991. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Nexperia USA Inc. PMDXB1200UPEZ, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Nexperia USA Inc., commonly silicon.

Our Nexperia USA Inc. PMDXB1200UPEZ is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at PMDXB1200UPEZ. We stock a large inventory containing a wide range of variety ET11063991, differentiates by its unique features Nexperia USA Inc.. We also have discounts for potential customers and let it until most of them avail from Nexperia USA Inc. PMDXB1200UPEZ. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET11063991 from leading Nexperia USA Inc., feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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