Nexperia USA Inc. PMGD175XNEX

PMGD175XNEX Nexperia USA Inc.
Nexperia USA Inc.

Product Information

FET Feature:
Standard
Base Part Number:
PMGD175
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 30V 870mA (Ta) 260mW (Ta) Surface Mount 6-TSSOP
Input Capacitance (Ciss) (Max) @ Vds:
81pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
1.65nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.25V @ 250µA
Drain to Source Voltage (Vdss):
30V
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
252mOhm @ 900mA, 4.5V
Supplier Device Package:
6-TSSOP
Manufacturer Standard Lead Time:
26 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
260mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
870mA (Ta)
Manufacturer:
Nexperia USA Inc.
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This is manufactured by Nexperia USA Inc.. The manufacturer part number is PMGD175XNEX. The FET features of the product include standard. Base Part Number: pmgd175. It features mosfet array 2 n-channel (dual) 30v 870ma (ta) 260mw (ta) surface mount 6-tssop. The product's input capacitance at maximum includes 81pf @ 15v. The maximum gate charge and given voltages include 1.65nc @ 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.25v @ 250µa. The product has a 30v drain to source voltage. Moreover, the product comes in 6-tssop, sc-88, sot-363. It has a maximum Rds On and voltage of 252mohm @ 900ma, 4.5v. 6-tssop is the supplier device package value. It has typical 26 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 260mw (ta). The continuous current drain at 25°C is 870ma (ta). The nexperia usa inc.'s product offers user-desired applications.

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PMGD175xNEx Datasheet(Datasheets)
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Label Chg 12/Mar/2017(PCN Packaging)
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All Dev Label Chgs 2/Aug/2020(PCN Packaging)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Nexperia USA Inc. PMGD175XNEX and the best services all around the world ET10878260. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Nexperia USA Inc. PMGD175XNEX, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Nexperia USA Inc., commonly silicon.

Our Nexperia USA Inc. PMGD175XNEX is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at PMGD175XNEX. We stock a large inventory containing a wide range of variety ET10878260, differentiates by its unique features Nexperia USA Inc.. We also have discounts for potential customers and let it until most of them avail from Nexperia USA Inc. PMGD175XNEX. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET10878260 from leading Nexperia USA Inc., feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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