NXP USA Inc. BSP32,115
Product Information
Current - Collector (Ic) (Max):
1 A
HTSUS:
0000.00.0000
Operating Temperature:
150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 100mA, 5V
Frequency - Transition:
100MHz
Vce Saturation (Max) @ Ib, Ic:
500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max):
80 V
Transistor Type:
PNP
Package:
Bulk
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-223
Power - Max:
1.3 W
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FAQs
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We accept all major payment methods for all products including ET22550994. Please check your shopping cart at the time of order.
You can order NXP USA Inc. brand products with BSP32,115 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of NXP USA Inc. BSP32,115. You can also check on our website or by contacting our customer support team for further order details on NXP USA Inc. BSP32,115.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET22550994 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "NXP USA Inc." products on our website by using Enrgtech's Unique Manufacturing Part Number ET22550994.
Yes. We ship BSP32,115 Internationally to many countries around the world.
This is manufactured by NXP USA Inc.. The manufacturer part number is BSP32,115. The maximum collector current includes 1 a. It is assigned with possible HTSUS value of 0000.00.0000. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-261-4, to-261aa. Furthermore, 40 @ 100ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. The 500mv @ 50ma, 500ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 80 v. The transistor is a pnp type. It is shipped in bulk package . In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. sot-223 is the supplier device package value. The maximum power of the product is 1.3 w.
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