onsemi MMBT6427LT1G Dual NPN Darlington Transistor, 500 mA 40 V HFE:10000, 3-Pin SOT-23
Product Information
Dimensions:
3.04 x 1.4 x 1.01mm
Maximum Collector Emitter Saturation Voltage:
1.5 V
Maximum Collector Cut-off Current:
50nA
Width:
1.4mm
Transistor Configuration:
Single
Maximum Continuous Collector Current:
500 mA
Package Type:
SOT-23
Number of Elements per Chip:
2
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN
Maximum Collector Base Voltage:
40 V
Maximum Base Emitter Saturation Voltage:
2 V
Maximum Emitter Base Voltage:
12 V
Length:
3.04mm
Pin Count:
3
Minimum DC Current Gain:
10000
Mounting Type:
Surface Mount
Maximum Power Dissipation:
300 mW
Maximum Collector Emitter Voltage:
40 V
Height:
1.01mm
Minimum Operating Temperature:
-55 °C
Current - Collector (Ic) (Max):
500 mA
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
40 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
20000 @ 100mA, 5V
edacadModel:
MMBT6427LT1G Models
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 500µA, 500mA
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/919616
Transistor Type:
NPN - Darlington
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
28 Weeks
Current - Collector Cutoff (Max):
1µA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3 (TO-236)
Power - Max:
225 mW
Base Product Number:
MMBT6427
ECCN:
EAR99
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You will get a confirmation email regarding your order of onsemi MMBT6427LT1G Dual NPN Darlington Transistor, 500 mA 40 V HFE:10000, 3-Pin SOT-23. You can also check on our website or by contacting our customer support team for further order details on onsemi MMBT6427LT1G Dual NPN Darlington Transistor, 500 mA 40 V HFE:10000, 3-Pin SOT-23.
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This is Dual NPN Darlington Transistor 500 mA 40 V HFE:10000 3-Pin SOT-23 manufactured by onsemi. The manufacturer part number is MMBT6427LT1G. The given dimensions of the product include 3.04 x 1.4 x 1.01mm. The product has a maximum 1.5 v collector emitter saturation voltage . It has a maximum 50na collector cut-off current . Furthermore, the product is 1.4mm wide. The product offers single transistor configuration. The product has a maximum 500 ma continuous collector current . The package is a sort of sot-23. It consists of 2 elements per chip. It has a maximum operating temperature of +150 °c. The transistor is a npn type. Additionally, it has 40 v maximum collector base voltage. In addition, the product has a maximum 2 v base emitter saturation voltage . It features a 12 v of maximum emitter base voltage. Its accurate length is 3.04mm. It contains 3 pins. It features up to 10000 of minimum DC current gain. The product is available in surface mount configuration. Provides up to 300 mw maximum power dissipation. Whereas features a 40 v of collector emitter voltage (max). In addition, the height is 1.01mm. Whereas, the minimum operating temperature of the product is -55 °c. The maximum collector current includes 500 ma. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 40 v. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 20000 @ 100ma, 5v is the minimum DC current gain at given voltage. The 1.5v @ 500µa, 500ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn - darlington type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 28 weeks standard lead time. In addition, 1µa is the maximum current at collector cutoff. sot-23-3 (to-236) is the supplier device package value. The maximum power of the product is 225 mw. Moreover, it corresponds to mmbt6427, a base product number of the product. The product is designated with the ear99 code number.
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