Minimum DC Current Gain:
500
Transistor Type:
NPN
Dimensions:
10.67 x 4.83 x 16.51mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
50 W
Maximum Continuous Collector Current:
4 A
Maximum Collector Base Voltage:
60 V
Maximum Collector Emitter Voltage:
60 V
Maximum Collector Cut-off Current:
2mA
Height:
16.51mm
Width:
4.83mm
Length:
10.67mm
Package Type:
TO-220
Number of Elements per Chip:
2
Maximum Collector Emitter Saturation Voltage:
2.5 V
Maximum Emitter Base Voltage:
5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
TIP110
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 60V 2A 2W Through Hole TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 1A, 4V
Transistor Type:
NPN - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
2.5V @ 8mA, 2A
Supplier Device Package:
TO-220-3
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
2W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
2A
Current - Collector Cutoff (Max):
2mA
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is TIP110TU. It features up to 500 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 10.67 x 4.83 x 16.51mm. The product is available in through hole configuration. Provides up to 50 w maximum power dissipation. The product has a maximum 4 a continuous collector current . Additionally, it has 60 v maximum collector base voltage. Whereas features a 60 v of collector emitter voltage (max). It has a maximum 2ma collector cut-off current . In addition, the height is 16.51mm. Furthermore, the product is 4.83mm wide. Its accurate length is 10.67mm. The package is a sort of to-220. It consists of 2 elements per chip. The product has a maximum 2.5 v collector emitter saturation voltage . It features a 5 v of maximum emitter base voltage. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Base Part Number: tip110. It features bipolar (bjt) transistor npn - darlington 60v 2a 2w through hole to-220-3. Furthermore, 1000 @ 1a, 4v is the minimum DC current gain at given voltage. The transistor is a npn - darlington type. The 2.5v @ 8ma, 2a is the maximum Vce saturation. to-220-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 2w. Moreover, the product comes in to-220-3. The maximum collector current includes 2a. In addition, 2ma is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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