Minimum DC Current Gain:
10000
Transistor Type:
NPN
Dimensions:
2.51 x 1.4 x 1.02mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
350 mW
Maximum Continuous Collector Current:
800 mA
Maximum Collector Base Voltage:
80 V
Maximum Collector Emitter Voltage:
80 V
Maximum Collector Cut-off Current:
100nA
Height:
1.02mm
Width:
1.4mm
Length:
2.51mm
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Collector Emitter Saturation Voltage:
1.5 V
Maximum Emitter Base Voltage:
12 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
47 Weeks
Base Part Number:
MMBTA28
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 80V 800mA 125MHz 350mW Surface Mount 3-SSOT
DC Current Gain (hFE) (Min) @ Ic, Vce:
10000 @ 100mA, 5V
Transistor Type:
NPN - Darlington
Frequency - Transition:
125MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 100µA, 100mA
Supplier Device Package:
3-SSOT
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
350mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
800mA
Current - Collector Cutoff (Max):
500nA
Manufacturer:
ON Semiconductor
