Minimum DC Current Gain:
10
Transistor Type:
PNP
Dimensions:
8 x 3.25 x 11mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
15 W
Maximum Collector Emitter Saturation Voltage:
-0.3 V
Maximum Collector Base Voltage:
-40 V
Maximum Collector Emitter Voltage:
25 V
Maximum Base Emitter Saturation Voltage:
-2.5 V
Maximum Operating Frequency:
1 MHz
Height:
11mm
Width:
3.25mm
Length:
8mm
Package Type:
TO-126
Number of Elements per Chip:
1
Maximum DC Collector Current:
5 A
Maximum Emitter Base Voltage:
-8 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
MJE210
Detailed Description:
Bipolar (BJT) Transistor PNP 25V 5A 65MHz 15W Through Hole TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
45 @ 2A, 1V
Transistor Type:
PNP
Frequency - Transition:
65MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.8V @ 1A, 5A
Supplier Device Package:
TO-126-3
Voltage - Collector Emitter Breakdown (Max):
25V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
15W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
5A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
