Minimum DC Current Gain:
5000
Transistor Type:
NPN
Dimensions:
4.58 x 3.86 x 4.58mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
625 mW
Maximum Continuous Collector Current:
500 mA
Maximum Collector Base Voltage:
30 V
Maximum Collector Emitter Voltage:
30 V
Maximum Collector Cut-off Current:
0.0001mA
Height:
4.58mm
Width:
3.86mm
Length:
4.58mm
Package Type:
TO-92
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Collector Emitter Saturation Voltage:
1.5 V
Maximum Emitter Base Voltage:
10 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
KSP13
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 30V 500mA 125MHz 625mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
10000 @ 100mA, 5V
Transistor Type:
NPN - Darlington
Frequency - Transition:
125MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 100µA, 100mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
30V
Packaging:
Bulk
Operating Temperature:
150°C (TJ)
Power - Max:
625mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Current - Collector (Ic) (Max):
500mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is KSP13BU. It features up to 5000 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 4.58 x 3.86 x 4.58mm. The product is available in through hole configuration. Provides up to 625 mw maximum power dissipation. The product has a maximum 500 ma continuous collector current . Additionally, it has 30 v maximum collector base voltage. Whereas features a 30 v of collector emitter voltage (max). It has a maximum 0.0001ma collector cut-off current . In addition, the height is 4.58mm. Furthermore, the product is 3.86mm wide. Its accurate length is 4.58mm. The package is a sort of to-92. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. The product has a maximum 1.5 v collector emitter saturation voltage . It features a 10 v of maximum emitter base voltage. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Base Part Number: ksp13. It features bipolar (bjt) transistor npn - darlington 30v 500ma 125mhz 625mw through hole to-92-3. Furthermore, 10000 @ 100ma, 5v is the minimum DC current gain at given voltage. The transistor is a npn - darlington type. The transition frequency of the product is 125mhz. The 1.5v @ 100µa, 100ma is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 30v. In addition, bulk is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 625mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). The maximum collector current includes 500ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
Reviews
Don’t hesitate to ask questions for better clarification.