Transistor Type:
NPN
Dimensions:
10.16 x 2.54 x 15.87mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
25 W
Maximum Collector Emitter Saturation Voltage:
1 V
Maximum Collector Base Voltage:
60 V
Maximum Collector Emitter Voltage:
60 V
Maximum Emitter Base Voltage:
7 V
Package Type:
TO-220F
Number of Elements per Chip:
1
Maximum DC Collector Current:
3 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
12 Weeks
Base Part Number:
KSD2012
Detailed Description:
Bipolar (BJT) Transistor NPN 60V 3A 3MHz 25W Through Hole TO-220F-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
150 @ 500mA, 5V
Transistor Type:
NPN
Frequency - Transition:
3MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1V @ 200mA, 2A
Supplier Device Package:
TO-220F-3
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
25W
Customer Reference:
Package / Case:
TO-220-3 Full Pack
Current - Collector (Ic) (Max):
3A
Current - Collector Cutoff (Max):
100µA (ICBO)
Manufacturer:
ON Semiconductor
