ON Semiconductor KSD1616AYTA
Product Information
Transistor Type:
NPN
Dimensions:
5.2 x 4.19 x 5.33mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
750 mW
Maximum Collector Emitter Saturation Voltage:
0.3 V
Maximum Collector Base Voltage:
120 V
Maximum Collector Emitter Voltage:
60 V
Maximum Base Emitter Saturation Voltage:
1.2 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
6 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
1 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
KSD1616
Detailed Description:
Bipolar (BJT) Transistor NPN 60V 1A 160MHz 750mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
135 @ 100mA, 2V
Transistor Type:
NPN
Frequency - Transition:
160MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
300mV @ 50mA, 1A
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
750mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Current - Collector (Ic) (Max):
1A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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Yes. We ship KSD1616AYTA Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is KSD1616AYTA. The transistor is a npn type. The given dimensions of the product include 5.2 x 4.19 x 5.33mm. The product is available in through hole configuration. Provides up to 750 mw maximum power dissipation. The product has a maximum 0.3 v collector emitter saturation voltage . Additionally, it has 120 v maximum collector base voltage. Whereas features a 60 v of collector emitter voltage (max). In addition, the product has a maximum 1.2 v base emitter saturation voltage . It carries 1 mhz of maximum operating frequency. It features a 6 v of maximum emitter base voltage. The package is a sort of to-92. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 1 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Base Part Number: ksd1616. It features bipolar (bjt) transistor npn 60v 1a 160mhz 750mw through hole to-92-3. Furthermore, 135 @ 100ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 160mhz. The 300mv @ 50ma, 1a is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 750mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) (formed leads). The maximum collector current includes 1a. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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