Transistor Type:
NPN
Dimensions:
4.58 x 3.86 x 4.58mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
250 mW
Maximum Collector Emitter Saturation Voltage:
0.3 V
Maximum Collector Base Voltage:
60 V
Maximum Collector Emitter Voltage:
50 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
150 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
KSC945
Detailed Description:
Bipolar (BJT) Transistor NPN 50V 150mA 300MHz 250mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1mA, 6V
Transistor Type:
NPN
Frequency - Transition:
300MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
300mV @ 10mA, 100mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
250mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Current - Collector (Ic) (Max):
150mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is KSC945YTA. The transistor is a npn type. The given dimensions of the product include 4.58 x 3.86 x 4.58mm. The product is available in through hole configuration. Provides up to 250 mw maximum power dissipation. The product has a maximum 0.3 v collector emitter saturation voltage . Additionally, it has 60 v maximum collector base voltage. Whereas features a 50 v of collector emitter voltage (max). It carries 1 mhz of maximum operating frequency. It features a 5 v of maximum emitter base voltage. The package is a sort of to-92. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 150 ma. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Base Part Number: ksc945. It features bipolar (bjt) transistor npn 50v 150ma 300mhz 250mw through hole to-92-3. Furthermore, 120 @ 1ma, 6v is the minimum DC current gain at given voltage. The transition frequency of the product is 300mhz. The 300mv @ 10ma, 100ma is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 250mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) (formed leads). The maximum collector current includes 150ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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