ON Semiconductor BC546ABU
Product Information
Transistor Type:
NPN
Dimensions:
4.58 x 3.86 x 4.58mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
500 mW
Maximum Collector Emitter Saturation Voltage:
600 mV
Maximum Collector Base Voltage:
80 V
Maximum Collector Emitter Voltage:
65 V
Maximum Base Emitter Saturation Voltage:
900 mV
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
6 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
100 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
BC546
Detailed Description:
Bipolar (BJT) Transistor NPN 65V 100mA 300MHz 500mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
110 @ 2mA, 5V
Transistor Type:
NPN
Frequency - Transition:
300MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
600mV @ 5mA, 100mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
65V
Packaging:
Bulk
Operating Temperature:
150°C (TJ)
Power - Max:
500mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
15nA (ICBO)
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET14513393 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14513393.
Yes. We ship BC546ABU Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is BC546ABU. The transistor is a npn type. The given dimensions of the product include 4.58 x 3.86 x 4.58mm. The product is available in through hole configuration. Provides up to 500 mw maximum power dissipation. The product has a maximum 600 mv collector emitter saturation voltage . Additionally, it has 80 v maximum collector base voltage. Whereas features a 65 v of collector emitter voltage (max). In addition, the product has a maximum 900 mv base emitter saturation voltage . It carries 1 mhz of maximum operating frequency. It features a 6 v of maximum emitter base voltage. The package is a sort of to-92. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 100 ma. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Base Part Number: bc546. It features bipolar (bjt) transistor npn 65v 100ma 300mhz 500mw through hole to-92-3. Furthermore, 110 @ 2ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 300mhz. The 600mv @ 5ma, 100ma is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 65v. In addition, bulk is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 500mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). The maximum collector current includes 100ma. In addition, 15na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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