ON Semiconductor 2N4401BU
Product Information
Transistor Type:
NPN
Dimensions:
5.2 x 4.19 x 5.33mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
625 mW
Maximum Collector Emitter Saturation Voltage:
0.75 V
Maximum Collector Base Voltage:
60 V
Maximum Collector Emitter Voltage:
40 V
Maximum Base Emitter Saturation Voltage:
1.2 V
Maximum Emitter Base Voltage:
6 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
600 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
2N4401
Detailed Description:
Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 625mW Through Hole TO-92-3
Transistor Type:
NPN
Frequency - Transition:
250MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
750mV @ 50mA, 500mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
40V
Packaging:
Bulk
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
625mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Current - Collector (Ic) (Max):
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 1V
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET14508273 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14508273.
Yes. We ship 2N4401BU Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is 2N4401BU. The transistor is a npn type. The given dimensions of the product include 5.2 x 4.19 x 5.33mm. The product is available in through hole configuration. Provides up to 625 mw maximum power dissipation. The product has a maximum 0.75 v collector emitter saturation voltage . Additionally, it has 60 v maximum collector base voltage. Whereas features a 40 v of collector emitter voltage (max). In addition, the product has a maximum 1.2 v base emitter saturation voltage . It features a 6 v of maximum emitter base voltage. The package is a sort of to-92. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 600 ma. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Base Part Number: 2n4401. It features bipolar (bjt) transistor npn 40v 600ma 250mhz 625mw through hole to-92-3. The transition frequency of the product is 250mhz. The 750mv @ 50ma, 500ma is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 40v. In addition, bulk is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 625mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). The maximum collector current includes 600ma. Furthermore, 100 @ 150ma, 1v is the minimum DC current gain at given voltage. The on semiconductor's product offers user-desired applications.
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