Dimensions:
5.2 x 4.19 x 5.33mm
Maximum Collector Emitter Saturation Voltage:
-0.25 V
Width:
4.19mm
Transistor Configuration:
Single
Maximum Operating Frequency:
250 MHz
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
PNP
Maximum Collector Base Voltage:
-40 V
Maximum Base Emitter Saturation Voltage:
-0.85 V
Maximum Emitter Base Voltage:
-5 V
Length:
5.2mm
Maximum DC Collector Current:
200 mA
Pin Count:
3
Minimum DC Current Gain:
60
Mounting Type:
Through Hole
Maximum Power Dissipation:
625 mW
Maximum Collector Emitter Voltage:
40 V
Height:
5.33mm
Minimum Operating Temperature:
-50 °C
Base Part Number:
2N3906
Detailed Description:
Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 625mW Through Hole TO-92-3
Transistor Type:
PNP
Frequency - Transition:
250MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
400mV @ 5mA, 50mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
40V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
625mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Current - Collector (Ic) (Max):
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 10mA, 1V
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is 2N3906TF. The given dimensions of the product include 5.2 x 4.19 x 5.33mm. The product has a maximum -0.25 v collector emitter saturation voltage . Furthermore, the product is 4.19mm wide. The product offers single transistor configuration. It carries 250 mhz of maximum operating frequency. The package is a sort of to-92. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. The transistor is a pnp type. Additionally, it has -40 v maximum collector base voltage. In addition, the product has a maximum -0.85 v base emitter saturation voltage . It features a -5 v of maximum emitter base voltage. Its accurate length is 5.2mm. Moreover, it has a maximum DC collector current of 200 ma. It contains 3 pins. It features up to 60 of minimum DC current gain. The product is available in through hole configuration. Provides up to 625 mw maximum power dissipation. Whereas features a 40 v of collector emitter voltage (max). In addition, the height is 5.33mm. Whereas, the minimum operating temperature of the product is -50 °c. Base Part Number: 2n3906. It features bipolar (bjt) transistor pnp 40v 200ma 250mhz 625mw through hole to-92-3. The transition frequency of the product is 250mhz. The 400mv @ 5ma, 50ma is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 40v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 625mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) (formed leads). The maximum collector current includes 200ma. Furthermore, 100 @ 10ma, 1v is the minimum DC current gain at given voltage. The on semiconductor's product offers user-desired applications.
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