Transistor Type:
NPN
Dimensions:
7.74 x 2.66 x 11.04mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
15 W
Maximum Collector Emitter Saturation Voltage:
0.6 V
Maximum Collector Base Voltage:
100 V
Maximum Collector Emitter Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
1.8 V
Maximum Operating Frequency:
10 MHz
Maximum Emitter Base Voltage:
7 V
Package Type:
TO-225
Number of Elements per Chip:
1
Maximum DC Collector Current:
4 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
28 Weeks
Base Part Number:
MJE243
Detailed Description:
Bipolar (BJT) Transistor NPN 100V 4A 40MHz 1.5W Through Hole TO-225AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 200mA, 1V
Transistor Type:
NPN
Frequency - Transition:
40MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
600mV @ 100mA, 1A
Supplier Device Package:
TO-225AA
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
1.5W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
4A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
