ON Semiconductor MJE5852G
Product Information
Transistor Type:
PNP
Dimensions:
9.28 x 10.28 x 4.82mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
80 W
Maximum Collector Emitter Saturation Voltage:
5 V
Maximum Collector Emitter Voltage:
400 V
Maximum Base Emitter Saturation Voltage:
1.5 V
Maximum Emitter Base Voltage:
6 V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Maximum DC Collector Current:
8 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
16 Weeks
Base Part Number:
MJE5852
Detailed Description:
Bipolar (BJT) Transistor PNP 400V 8A 80W Through Hole TO-220AB
Transistor Type:
PNP
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
5V @ 3A, 8A
Series:
SWITCHMODE™
Supplier Device Package:
TO-220AB
Voltage - Collector Emitter Breakdown (Max):
400V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
80W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
8A
DC Current Gain (hFE) (Min) @ Ic, Vce:
5 @ 5A, 5V
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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Yes. We ship MJE5852G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is MJE5852G. The transistor is a pnp type. The given dimensions of the product include 9.28 x 10.28 x 4.82mm. The product is available in through hole configuration. Provides up to 80 w maximum power dissipation. The product has a maximum 5 v collector emitter saturation voltage . Whereas features a 400 v of collector emitter voltage (max). In addition, the product has a maximum 1.5 v base emitter saturation voltage . It features a 6 v of maximum emitter base voltage. The package is a sort of to-220ab. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 8 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 16 weeks of manufacturer standard lead time. Base Part Number: mje5852. It features bipolar (bjt) transistor pnp 400v 8a 80w through hole to-220ab. The 5v @ 3a, 8a is the maximum Vce saturation. The product switchmode™, is a highly preferred choice for users. to-220ab is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 400v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 80w. Moreover, the product comes in to-220-3. The maximum collector current includes 8a. Furthermore, 5 @ 5a, 5v is the minimum DC current gain at given voltage. The on semiconductor's product offers user-desired applications.
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