ON Semiconductor NSV60600MZ4T1G
Product Information
Transistor Type:
PNP
Dimensions:
6.7 x 3.7 x 1.65mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
800 mW
Maximum Collector Emitter Saturation Voltage:
-0.35 V
Maximum Collector Base Voltage:
-100 V dc
Maximum Collector Emitter Voltage:
60 V
Maximum Base Emitter Saturation Voltage:
-1 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
-6 V
Package Type:
SOT-223
Number of Elements per Chip:
1
Maximum DC Collector Current:
6 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3+Tab
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
22 Weeks
Base Part Number:
NSV606
Detailed Description:
Bipolar (BJT) Transistor PNP 60V 6A 100MHz 800mW Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1A, 2V
Transistor Type:
PNP
Frequency - Transition:
100MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
350mV @ 600mA, 6A
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
800mW
Customer Reference:
Package / Case:
TO-261-4, TO-261AA
Current - Collector (Ic) (Max):
6A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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Yes. We ship NSV60600MZ4T1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NSV60600MZ4T1G. The transistor is a pnp type. The given dimensions of the product include 6.7 x 3.7 x 1.65mm. The product is available in surface mount configuration. Provides up to 800 mw maximum power dissipation. The product has a maximum -0.35 v collector emitter saturation voltage . Additionally, it has -100 v dc maximum collector base voltage. Whereas features a 60 v of collector emitter voltage (max). In addition, the product has a maximum -1 v base emitter saturation voltage . It carries 1 mhz of maximum operating frequency. It features a -6 v of maximum emitter base voltage. The package is a sort of sot-223. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 6 a. It has a maximum operating temperature of +150 °c. It contains 3+tab pins. The product offers single transistor configuration. It has typical 22 weeks of manufacturer standard lead time. Base Part Number: nsv606. It features bipolar (bjt) transistor pnp 60v 6a 100mhz 800mw surface mount. Furthermore, 120 @ 1a, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. The 350mv @ 600ma, 6a is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 60v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 800mw. Moreover, the product comes in to-261-4, to-261aa. The maximum collector current includes 6a. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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