ON Semiconductor MMBT6429LT1G
Product Information
The MMBT6429LT1G is a potent NPN bipolar transistor tailored for a range of electronic applications. Produced by ON Semiconductor, it excels in both switching and amplification tasks.
Transistor Type:
NPN
Dimensions:
3.04 x 1.4 x 1.01mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
225 mW
Maximum Collector Emitter Saturation Voltage:
0.6 V
Maximum Collector Base Voltage:
55 V
Maximum Collector Emitter Voltage:
45 V
Maximum Base Emitter Saturation Voltage:
0.66 V
Maximum Operating Frequency:
100 MHz
Maximum Emitter Base Voltage:
6 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
200 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
12 Weeks
Base Part Number:
MMBT6429
Detailed Description:
Bipolar (BJT) Transistor NPN 45V 200mA 700MHz 225mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce:
500 @ 100µA, 5V
Transistor Type:
NPN
Frequency - Transition:
700MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
600mV @ 5mA, 100mA
Supplier Device Package:
SOT-23-3 (TO-236)
Voltage - Collector Emitter Breakdown (Max):
45V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
225mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
200mA
Current - Collector Cutoff (Max):
100nA
Manufacturer:
ON Semiconductor
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Yes. We ship MMBT6429LT1G Internationally to many countries around the world.
The ON Semiconductor MMBT6429LT1G is a sophisticated NPN BJT transistor with moderate voltage and current-controlling capabilities. Its small SOT-23 package, high-speed switching, and low noise characteristics make it perfect for a wide range of electronic circuits. ON Semiconductor's dedication to quality ensures that the MMBT6429LT1G transistor provides reliable and efficient performance in various applications, contributing to the success of modern electronic systems.
The MMBT6429LT1G transistor exhibits excellent switching speeds, enabling fast response times in switching applications. Additionally, it features low noise characteristics, which is beneficial in signal-sensitive circuits where minimising noise interference is crucial.
The device can handle moderate voltage and current levels despite its small size. With a maximum collector-emitter voltage (VCEO) of 45 volts and a continuous collector current (IC) of 0.2 amperes, this transistor is well-suited for low-power amplification and switching tasks.
Application Potential of the ON Semiconductor MMBT6429LT1G:
The MMBT6429LT1G is a general-purpose transistor, making it suitable for various electronic circuits, including:
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